| ‘lllvVISHAYQwww.vishay.com Instantaneous Fleverse Leakage EsH2B, EsH2C, EsH2D Vishay General Semiconductor V 100 Instantaneous Forward Current (A) 3 Junction Capacitance (pF) 0.6 0.6 1 0 1.2 Instantaneous Fonlvard Voltage (V) Reverse Voltage (V)Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance 1000 O 100 1/ m8 A 3 <( N g E _L §,-‘E 8 E 0 2 0.1 .9 2 E ,- 0.01 Percent oi Rated Peak Reverse Voltage (O/O) I - Pulse Duration (s) Fig. A - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (minimeters) Do-214AA (SMB) Cathode Band Mounting Pad Layoutii + t 0.085 (2.159) MAX. 0.086 (2.20) 0.155 (3.94) ( ‘ ‘ 0.077(1.95) 0.1301330) Ta? 5_ 1 0.086 (2.18) MIN. — 0.180 (4.57) l I ‘’ T0160 (406) 0.060 (1.52) MIN. + + f 0.012(0.305)I‘ 0.006 (0.152) 0.220 (5.59) REF. + 0.096 (2.44) 0.084 (2.13)0.060 (1.52): if +0008 (0.2) 0.030 (0.76) 0 (0) 0.220 (5.59) 0.205 (5.21) 'Revision: 07-Feb-12 3 Document Number: 84649 For technical questions within your region: DiodesAmericas@vishay.c0m, DiodesAsia@vishay.com, DiodesEurope@vishay.c0m THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91000 |